Fundamentals of Modern VLSI Devices

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design...
¥21,225 JPY
¥21,225 JPY
SKU: 9781108480024
Product Type: Books
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Author: Yuan Taur
Format: Hardcover
Language: English
Subtotal: ¥21,225
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Fundamentals of Modern VLSI Devices by Taur, Yuan

Fundamentals of Modern VLSI Devices

¥21,225

Fundamentals of Modern VLSI Devices

¥21,225
Author: Yuan Taur
Format: Hardcover
Language: English
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

Author: Yuan Taur, Tak H. Ning
Publisher: Cambridge University Press
Published: 12/02/2021
Pages: 700
Binding Type: Hardcover
Weight: 2.90lbs
Size: 9.80h x 6.90w x 1.20d
ISBN: 9781108480024

About the Author
Taur, Yuan: - Yuan Taur is a Distinguished Professor of Electrical and Computer Engineering at the University of California, San Diego, having previously worked at IBM's T. J. Watson Research Center, New York. He is an IEEE Fellow.Ning, Tak H.: - Tak H. Ning is an IBM Fellow (Retired) at the T. J. Watson Research Center, New York. He is a Fellow of the IEEE and the American Physical Society, and a member of the US National Academy of Engineering.

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